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Issue 6, 2016
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Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

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Abstract

We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).

Graphical abstract: Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

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Publication details

The article was received on 04 Nov 2015, accepted on 07 Jan 2016 and first published on 13 Jan 2016


Article type: Paper
DOI: 10.1039/C5TC03656A
Citation: J. Mater. Chem. C, 2016,4, 1345-1350
  • Open access: Creative Commons BY-NC license
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    Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

    K. E. Hnida, S. Bäßler, J. Mech, K. Szaciłowski, R. P. Socha, M. Gajewska, K. Nielsch, M. Przybylski and G. D. Sulka, J. Mater. Chem. C, 2016, 4, 1345
    DOI: 10.1039/C5TC03656A

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