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Issue 38, 2016
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A comparison of ZnS and ZnSe passivation layers on CdS/CdSe co-sensitized quantum dot solar cells

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Abstract

The design and synthesis of passivation materials are of significant importance to reducing surface charge recombination in quantum dot-sensitized solar cells (QDSCs). In this study, the systematic characterization and comparison of the optical and electrochemical properties of ZnS and ZnSe passivation layers and their impacts on the performance of the resulting QDSCs have been investigated. The ZnS and ZnSe passivation layers were all deposited via a reproducible and controlled successive ionic layer adsorption and reaction method. QDSCs with a ZnSe passivation layer demonstrated strongly inhibited interfacial charge recombination and greatly enhanced light harvesting, resulting in a power conversion efficiency of up to 6.4%, which is appreciably higher than 4.9% for the solar cells with a ZnS passivation layer and 3.4% for the solar cells without a passivation layer.

Graphical abstract: A comparison of ZnS and ZnSe passivation layers on CdS/CdSe co-sensitized quantum dot solar cells

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Publication details

The article was received on 23 Feb 2016, accepted on 05 May 2016 and first published on 06 May 2016


Article type: Paper
DOI: 10.1039/C6TA01590E
Citation: J. Mater. Chem. A, 2016,4, 14773-14780
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    A comparison of ZnS and ZnSe passivation layers on CdS/CdSe co-sensitized quantum dot solar cells

    F. Huang, Q. Zhang, B. Xu, J. Hou, Y. Wang, R. C. Massé, S. Peng, J. Liu and G. Cao, J. Mater. Chem. A, 2016, 4, 14773
    DOI: 10.1039/C6TA01590E

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