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Issue 6, 2016
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Assembly of inorganic [Mo2S2O2]2+ panels connected by selenite anions to nanoscale chalcogenide–polyoxometalate clusters

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Abstract

We describe how supramolecular assembly, mediated by control of the ratio of the hetero-atoms in the units [Mo2S2O2]2+ and SeO32− leads to the formation of new types of building blocks, [(Mo2O2S2)3(OH)4(H2O)6(SeO3)] = {Mo6} and [(Mo2O2S2)2(OH)2(H2O)4(SeO3)] = {Mo4} which are linked in an type of inorganic ‘panelling’ to the assembly of a range of new clusters 1–3 with the general formula {(Mo2O2S2)x(OH)y(SeO3)z(H2O)w}n, where x, y, z, w, n = [8, 0, 20, 8, 24] for 1, [14, 14, 17, 8, 20] for 2 and [8, 8, 8, 0, 8] for 3. Cluster 1, a rare example of inorganic cryptand, exhibits an elliptical “endo” motif defining an anisotropic ellipse with the dimensions 1.7 × 1.0 nm, with pores ranging from 5.3 to 6.4 Å and site selective cation recognition properties; cluster 2 exhibits an “exo” structural motif constructed by 3 × {Mo6} and 2 × {Mo4} panels spanning a cross shape 2.4 × 2.0 nm and cluster 3 a ring shaped structure of a 1.5 nm in diameter. The control of endo vs. exo topology as a function of the Se : Mo ratio is reflected to the difference in surface area of ca. 500 Å2 between clusters 1 and 2 intermolecular interactions and proton conduction properties, and this work shows that very simple synthetic parameters can critically change the structure and properties of all-inorganic nanoscale chalcogenide–polyoxometalates.

Graphical abstract: Assembly of inorganic [Mo2S2O2]2+ panels connected by selenite anions to nanoscale chalcogenide–polyoxometalate clusters

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Publication details

The article was received on 23 Dec 2015, accepted on 25 Feb 2016 and first published on 25 Feb 2016


Article type: Edge Article
DOI: 10.1039/C5SC04944J
Citation: Chem. Sci., 2016,7, 3798-3804
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    Assembly of inorganic [Mo2S2O2]2+ panels connected by selenite anions to nanoscale chalcogenide–polyoxometalate clusters

    H. Zang, J. Chen, D. Long, L. Cronin and H. N. Miras, Chem. Sci., 2016, 7, 3798
    DOI: 10.1039/C5SC04944J

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