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Issue 111, 2016
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Direct contact four-point probe characterization of Si microwire absorbers for artificial photosynthesis

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Abstract

We present a facile approach that achieves four-point electrical characterization of silicon microwires fabricated using a bottom-up vapour–liquid–solid process. Tungsten probes are brought into direct contact with silicon microwires using piezoelectrically driven probe actuators. This technique can be applied to silicon microwires without the need for high-temperature lithographic preparation or the additional use of In/Ga to ensure reliable electrical contact between the probe and the wire. Comparison between two-point probe and four-point probe measurements demonstrates the robustness of the four-point approach. Significantly, the four-point characterization technique is not impacted by native oxides at the microwire/tungsten probe interface. The four-point technique can be applied to sense electrical responses in half-cell and full-cell representations of artificial photosynthesis systems, regardless of catalysts or functional groups attached to the microwire sidewalls.

Graphical abstract: Direct contact four-point probe characterization of Si microwire absorbers for artificial photosynthesis

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Publication details

The article was received on 21 Sep 2016, accepted on 14 Nov 2016 and first published on 14 Nov 2016


Article type: Paper
DOI: 10.1039/C6RA23534D
Citation: RSC Adv., 2016,6, 110344-110348
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    Direct contact four-point probe characterization of Si microwire absorbers for artificial photosynthesis

    J. T. Engel, B. E. Blaikie, A. Kumar, A. Castañeda, A. Gupta and D. R. Oliver, RSC Adv., 2016, 6, 110344
    DOI: 10.1039/C6RA23534D

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