Issue 100, 2016, Issue in Progress

Synthesis and optoelectronic properties of reduced graphene oxide/InP quantum dot hybrids

Abstract

Graphene/quantum dot (QD) hybrids have recently emerged as a new class of functional materials due to the enhancement of exciton dissociation and electron transport between graphene and QDs, giving potential applications in photocatalysts, photodetectors and photovoltaics. Herein, we report a simple approach to synthesize reduced graphene oxide (rGO)–indium phosphide (InP) QD hybrids, wherein the growth of InP QDs on graphene nanosheets and the reduction of GO occur simultaneously. The electron microscopy indicated that uniform InP QDs with size of 3.4–5.5 nm were well distributed on the rGO nanosheets. The charge transfer between rGO and InP QDs was analysed using Raman and PL spectra, confirming that the hybrids enable efficient separation of the photo-induced charges. The optoelectronic properties of the rGO/InP QD hybrids have also been investigated. Our results suggest that the hybrids exhibit a sensitive photoelectric response under blue light irradiation.

Graphical abstract: Synthesis and optoelectronic properties of reduced graphene oxide/InP quantum dot hybrids

Supplementary files

Article information

Article type
Communication
Submitted
13 Sep 2016
Accepted
07 Oct 2016
First published
10 Oct 2016

RSC Adv., 2016,6, 97861-97864

Synthesis and optoelectronic properties of reduced graphene oxide/InP quantum dot hybrids

G. Jiang, Y. Su, M. Li, J. Hu, B. Zhao, Z. Yang and H. Wei, RSC Adv., 2016, 6, 97861 DOI: 10.1039/C6RA22858E

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