Issue 85, 2016, Issue in Progress
From the journal:

RSC Advances

Solution-processed UV light emitting diode based on butyltriphenylsilane modified phenanthro[9,10-d]imidazole with high efficiency†

Zhao Gao,ac   Fangming Liu,a   Jinyu Li,a   Gang Cheng*b  and  Ping Lu*a  

* Corresponding authors

a State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, China
E-mail: lup@jlu.edu.cn

b State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Avenue, Changchun 130012, China
E-mail: chenggang@jlu.edu.cn

c National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621900, China

Abstract

A new UV fluorescent material based on phenanthro[9,10-d]imidazole and butyltriphenylsilane (SiBPI) is designed and synthesized, which presents high quantum yield and excellent solubility. A non-doped solution-processed device using SiBPI as an active layer achieves an extremely high ηext of 1.76% with guaranteed saturated UV CIE coordinates of (0.158, 0.042).

Graphical abstract: Solution-processed UV light emitting diode based on butyltriphenylsilane modified phenanthro[9,10-d]imidazole with high efficiency

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Article information

DOI
https://doi.org/10.1039/C6RA18755B
Article type
Communication
Submitted
24 Jul 2016
Accepted
16 Aug 2016
First published
17 Aug 2016

RSC Adv., 2016,6, 81744-81749

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Solution-processed UV light emitting diode based on butyltriphenylsilane modified phenanthro[9,10-d]imidazole with high efficiency

Z. Gao, F. Liu, J. Li, G. Cheng and P. Lu, RSC Adv., 2016, 6, 81744 DOI: 10.1039/C6RA18755B

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