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Issue 71, 2016, Issue in Progress
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Bottom-up direct writing approach for controlled fabrication of WS2/MoS2 heterostructure systems

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Abstract

The ability to construct heterostructures that consist of layered transition metal dichalcogenides materials (MX2) in a controlled fashion provides an attractive solution for materials design and device applications. For nanotechnology applications it is important to control the shape, geometry and precise position of the grown heterostructure assemblies on a variety of substrates. In this study, we developed a “direct writing” technique to fabricate arrays of WS2/MoS2 and MoS2/WS2/MoS2 heterostructures at predefined locations on a silicon substrate in a controlled fashion. Water based precursor inks were implemented to ensure the formation of quality heterostructure surfaces which are free of residual polymer contaminants. With this technique we demonstrate an attractive and scalable technology with unique capabilities for precise growth of dissimilar MX2 materials, layered either in a vertical or lateral arrangement.

Graphical abstract: Bottom-up direct writing approach for controlled fabrication of WS2/MoS2 heterostructure systems

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Publication details

The article was received on 14 May 2016, accepted on 04 Jul 2016 and first published on 07 Jul 2016


Article type: Paper
DOI: 10.1039/C6RA12576J
Citation: RSC Adv., 2016,6, 66589-66594
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    Bottom-up direct writing approach for controlled fabrication of WS2/MoS2 heterostructure systems

    R. Dong, L. Moore, N. Aripova, C. Williamson, R. Schurz, Y. Liu, L. E. Ocola and I. Kuljanishvili, RSC Adv., 2016, 6, 66589
    DOI: 10.1039/C6RA12576J

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