Jump to main content
Jump to site search

Issue 49, 2016
Previous Article Next Article

Patterning of amorphous-InGaZnO thin-film transistors by stamping of surface-modified polydimethylsiloxane

Author affiliations

Abstract

An indium gallium zinc oxide (IGZO) layer was patterned and thin-film transistors (TFTs) were fabricated by surface modified polydimethylsiloxane (PDMS) stamping and IGZO solution. The PDMS stamp was prepared by immersion in piranha solution and treatment with UV–ozone to make a hydrophilic surface. Patterned PDMS was inked by contact with the IGZO layer, and then stamped on the desired substrate. The process did not cause etching damage, so the stamped amorphous-IGZO TFTs showed low leakage current of ∼10−11 A, high on/off current ratio of ∼108, carrier mobility of 6 cm2 V−1 s−1, and narrow hysteresis of 0.2 V. UV irradiation on the IGZO layer caused a photochemical annealing effect that improved the electrical properties of IGZO TFTs. This method provides a simple and versatile process to fabricate transparent metal-oxide TFTs based on patterning the devices by reusable stamping methods.

Graphical abstract: Patterning of amorphous-InGaZnO thin-film transistors by stamping of surface-modified polydimethylsiloxane

Back to tab navigation

Supplementary files

Publication details

The article was received on 09 Mar 2016, accepted on 20 Apr 2016 and first published on 21 Apr 2016


Article type: Paper
DOI: 10.1039/C6RA06264D
Citation: RSC Adv., 2016,6, 43147-43151
  • Open access: Creative Commons BY-NC license
  •   Request permissions

    Patterning of amorphous-InGaZnO thin-film transistors by stamping of surface-modified polydimethylsiloxane

    C. Gu and J. Lee, RSC Adv., 2016, 6, 43147
    DOI: 10.1039/C6RA06264D

    This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material and it is not used for commercial purposes.

    Reproduced material should be attributed as follows:

    • For reproduction of material from NJC:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
    • For reproduction of material from PCCP:
      [Original citation] - Published by the PCCP Owner Societies.
    • For reproduction of material from PPS:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
    • For reproduction of material from all other RSC journals:
      [Original citation] - Published by The Royal Society of Chemistry.

    Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.

Search articles by author

Spotlight

Advertisements