Jump to main content
Jump to site search

Issue 26, 2016
Previous Article Next Article

Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping

Author affiliations

Abstract

In this study, we investigated the effect of Ni and Ta doping on resistive switching behaviors of solution-processed HfOX-based resistive switching memory (RRAM) devices. The observations are discussed in terms of oxygen vacancies according to doping concentration. The initial resistance and forming voltages are influenced by doping concentration due to the reduction of formation energy of oxygen vacancies, whereby a higher concentration of dopant results in a lower forming voltage and initial resistance of RRAM devices. In addition, the Ni dopant has a significant effect on forming processes in HfOX-based RRAM devices. It is observed that 10% of Ni doping can lead to forming-free behaviors. This study demonstrates the facile control of resistive switching behaviors by doping processes during the preparation of solutions and suggests that proper doping is an easy method that can lead to modulation of RRAM properties for future nonvolatile memory applications.

Graphical abstract: Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping

Back to tab navigation

Publication details

The article was received on 16 Jan 2016, accepted on 13 Feb 2016 and first published on 16 Feb 2016


Article type: Paper
DOI: 10.1039/C6RA01369D
Citation: RSC Adv., 2016,6, 21917-21921
  • Open access: Creative Commons BY-NC license
  •   Request permissions

    Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping

    M. Akbari and J. Lee, RSC Adv., 2016, 6, 21917
    DOI: 10.1039/C6RA01369D

    This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material and it is not used for commercial purposes.

    Reproduced material should be attributed as follows:

    • For reproduction of material from NJC:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
    • For reproduction of material from PCCP:
      [Original citation] - Published by the PCCP Owner Societies.
    • For reproduction of material from PPS:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
    • For reproduction of material from all other RSC journals:
      [Original citation] - Published by The Royal Society of Chemistry.

    Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.

Search articles by author

Spotlight

Advertisements