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Issue 30, 2016
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Thermal conductivity of graphene with defects induced by electron beam irradiation

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Abstract

We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ∼7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 1010 cm−2 to 1.8 × 1011 cm−2 the thermal conductivity decreases from ∼(1.8 ± 0.2) × 103 W mK−1 to ∼(4.0 ± 0.2) × 102 W mK−1 near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ∼400 W mK−1. The thermal conductivity dependence on the defect density is analyzed using the Boltzmann transport equation and molecular dynamics simulations. The results are important for understanding phonon – point defect scattering in two-dimensional systems and for practical applications of graphene in thermal management.

Graphical abstract: Thermal conductivity of graphene with defects induced by electron beam irradiation

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Publication details

The article was received on 28 Apr 2016, accepted on 11 Jul 2016 and first published on 12 Jul 2016


Article type: Paper
DOI: 10.1039/C6NR03470E
Citation: Nanoscale, 2016,8, 14608-14616
  • Open access: Creative Commons BY-NC license
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    Thermal conductivity of graphene with defects induced by electron beam irradiation

    H. Malekpour, P. Ramnani, S. Srinivasan, G. Balasubramanian, D. L. Nika, A. Mulchandani, R. K. Lake and A. A. Balandin, Nanoscale, 2016, 8, 14608
    DOI: 10.1039/C6NR03470E

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