Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 26, 2016
Previous Article Next Article

A filterless, visible-blind, narrow-band, and near-infrared photodetector with a gain

Author affiliations

Abstract

In many applications of near-infrared (NIR) light detection, a band-pass filter is needed to exclude the noise caused by visible light. Here, we demonstrate a filterless, visible-blind, narrow-band NIR photodetector with a full-width at half-maximum of <50 nm for the response spectrum. These devices have a thick (>4 μm) nanocomposite absorbing layers made of polymer–fullerene:lead sulfide (PbS) quantum dots (QDs). The PbS QDs yield a photoconductive gain due to their hole-trapping effect, which effectively enhances both the responsivity and the visible rejection ratio of the external quantum efficiency by >10 fold compared to those without PbS QDs. Encouragingly, the inclusion of the PbS QDs does not increase the device noise. We directly measured a noise equivalent power (NEP) of 6.1 pW cm−2 at 890 nm, and a large linear dynamic range (LDR) over 11 orders of magnitude. The highly sensitive visible-blind NIR narrow-band photodetectors may find applications in biomedical engineering.

Graphical abstract: A filterless, visible-blind, narrow-band, and near-infrared photodetector with a gain

Back to tab navigation
Please wait while Download options loads

Publication details

The article was received on 08 Apr 2016, accepted on 27 May 2016 and first published on 30 May 2016


Article type: Paper
DOI: 10.1039/C6NR02902G
Citation: Nanoscale, 2016,8, 12990-12997
  •   Request permissions

    A filterless, visible-blind, narrow-band, and near-infrared photodetector with a gain

    L. Shen, Y. Zhang, Y. Bai, X. Zheng, Q. Wang and J. Huang, Nanoscale, 2016, 8, 12990
    DOI: 10.1039/C6NR02902G

Search articles by author