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Issue 15, 2016
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Transparent megahertz circuits from solution-processed composite thin films

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Abstract

Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm2 V−1 s−1), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm2 V−1 s−1. On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (fT = 102 MHz) and a maximum oscillation frequency (fmax = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

Graphical abstract: Transparent megahertz circuits from solution-processed composite thin films

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Publication details

The article was received on 26 Jan 2016, accepted on 11 Mar 2016 and first published on 11 Mar 2016


Article type: Paper
DOI: 10.1039/C6NR00602G
Citation: Nanoscale, 2016,8, 7978-7983
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    Transparent megahertz circuits from solution-processed composite thin films

    X. Liu, D. Wan, Y. Wu, X. Xiao, S. Guo, C. Jiang, J. Li, T. Chen, X. Duan, Z. Fan and L. Liao, Nanoscale, 2016, 8, 7978
    DOI: 10.1039/C6NR00602G

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