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Issue 1, 2016
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Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy

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Abstract

Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 °C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains contradictory results reported in prior studies. We also show that under wet atmospheres the Ga droplets can be mobile and promote nanowire growth as they traverse the silicon substrate.

Graphical abstract: Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy

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Publication details

The article was received on 31 Jul 2015, accepted on 05 Nov 2015 and first published on 26 Nov 2015


Article type: Paper
DOI: 10.1039/C5NR05152E
Citation: Nanoscale, 2016,8, 266-275
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    Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy

    M. Kolíbal, L. Novák, T. Shanley, M. Toth and T. Šikola, Nanoscale, 2016, 8, 266
    DOI: 10.1039/C5NR05152E

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