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Issue 3, 2016
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Dislocation strain as the mechanism of phonon scattering at grain boundaries

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Abstract

Thermal conductivities of polycrystalline thermoelectric materials are satisfactorily calculated by replacing the commonly used Casimir model (freqeuncy-independent) with grain boundary dislocation strain model (frequency-dependent) of Klemens. It is demonstrated that the grain boundaries are better described as a collection of dislocations rather than perfectly scattering interfaces.

Graphical abstract: Dislocation strain as the mechanism of phonon scattering at grain boundaries

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Publication details

The article was received on 14 Dec 2015, accepted on 22 Feb 2016 and first published on 26 Feb 2016


Article type: Communication
DOI: 10.1039/C5MH00299K
Citation: Mater. Horiz., 2016,3, 234-240
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    Dislocation strain as the mechanism of phonon scattering at grain boundaries

    H. Kim, S. D. Kang, Y. Tang, R. Hanus and G. Jeffrey Snyder, Mater. Horiz., 2016, 3, 234
    DOI: 10.1039/C5MH00299K

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