Issue 46, 2016
From the journal:

Dalton Transactions

Correction: Ga[OSi(OtBu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry

James P. Dombrowski,ac   Gregory R. Johnson,b   Alexis T. Bell*bc  and  T. Don Tilley*ac  

* Corresponding authors

a Department of Chemistry, University of California, Berkeley, Berkeley, California 94720-1460, USA
E-mail: tdtilley@berkeley.edu

b Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720-1460, USA

c Chemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA

Abstract

Correction for ‘Ga[OSi(OtBu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry’ by James P. Dombrowski et al., Dalton Trans., 2016, 45, 11025–11034.

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Article information

DOI
https://doi.org/10.1039/C6DT90202B
Article type
Correction
Submitted
02 Nov 2016
Accepted
02 Nov 2016
First published
11 Nov 2016
This article is Open Access
Creative Commons BY license

Dalton Trans., 2016,45, 18750-18751

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Correction: Ga[OSi(OtBu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry

J. P. Dombrowski, G. R. Johnson, A. T. Bell and T. D. Tilley, Dalton Trans., 2016, 45, 18750 DOI: 10.1039/C6DT90202B

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