Issue 47, 2016

Systematic molecular engineering of Zn-ketoiminates for application as precursors in atomic layer depositions of zinc oxide

Abstract

Molecular engineering of seven closely related zinc ketoiminates, namely, [Zn(dapki)2], [Zn(daeki)2], [Zn(epki)2], [Zn(eeki)2], [Zn(mpki)2], [Zn(meki)2], and [Zn(npki)2], leads to the optimisation of precursor thermal properties in terms of volatilisation rate, onset of volatilisation, reactivity and thermal stability. The influence of functional groups at the imine side chain of the ligands on the precursor properties is studied with regard to their viability as precursors for atomic layer deposition (ALD) of ZnO. The synthesis of [Zn(eeki)2], [Zn(epki)2] and [Zn(dapki)2] and the crystal structures of [Zn(mpki)2], [Zn(eeki)2], [Zn(dapki)2] and [Zn(npki)2] are presented. From the investigation of the physico-chemical characteristics, it was inferred that all compounds are monomeric, volatile and exhibit high thermal stability, all of which make them promising ALD precursors. Compound [Zn(eeki)2] is in terms of thermal properties the most promising Zn-ketoiminate. It is reactive towards water, possesses a melting point of 39 °C, is stable up to 24 days at 220 °C and has an extended volatilisation rate compared to the literature known Zn-ketoiminates. It demonstrated self-saturated, water assisted growth of zinc oxide (ZnO) with growth rates in the order of 1.3 Å per cycle. Moreover, it displayed a broad temperature window from TDep = 175–300 °C and is the first report of a stable high temperature (>200 °C) ALD process for ZnO returning highly promising growth rates.

Graphical abstract: Systematic molecular engineering of Zn-ketoiminates for application as precursors in atomic layer depositions of zinc oxide

Supplementary files

Article information

Article type
Paper
Submitted
14 Sep 2016
Accepted
24 Oct 2016
First published
25 Oct 2016
This article is Open Access
Creative Commons BY-NC license

Dalton Trans., 2016,45, 19012-19023

Systematic molecular engineering of Zn-ketoiminates for application as precursors in atomic layer depositions of zinc oxide

R. O’ Donoghue, D. Peeters, D. Rogalla, H. Becker, J. Rechmann, S. Henke, M. Winter and A. Devi, Dalton Trans., 2016, 45, 19012 DOI: 10.1039/C6DT03571J

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