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Issue 24, 2016
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Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

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Abstract

GeSb6Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb6Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m sāˆ’1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measured growth rates exceed any directly measured growth rate of a phase change material. The crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.

Graphical abstract: Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

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Publication details

The article was received on 21 Jan 2016, accepted on 24 Mar 2016 and first published on 30 Mar 2016


Article type: Paper
DOI: 10.1039/C6DT00298F
Citation: Dalton Trans., 2016,45, 9988-9995
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    Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

    M. M. Winseck, H.-Y. Cheng, G. H. Campbell and M. K. Santala, Dalton Trans., 2016, 45, 9988
    DOI: 10.1039/C6DT00298F

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