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Issue 13, 2016
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Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

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Abstract

Metal heterostructures have been used in recent years to gain insights into the relevance of energy dissipation into electronic degrees of freedom in surface chemistry. Non-adiabaticity in the surface chemistry results in the creation of electron–hole pairs, the number and energetic distribution of which need to be studied in detail. Several types of devices, such as metal–insulator–metal, metal–semiconductor and metal–semiconductor oxide–semiconductor, have been used. These devices operate by spatially separating the electrons from the holes, as an internal barrier allows only – or at least favours – transport from the top to the back electrode for one kind of carrier. An introduction into the matter, a survey of the literature and a critical discussion of the state of research is attempted.

Graphical abstract: Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

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Publication details

The article was received on 23 Dec 2015 and first published on 17 May 2016


Article type: Review Article
DOI: 10.1039/C5CS00932D
Citation: Chem. Soc. Rev., 2016,45, 3747-3755
  • Open access: Creative Commons BY-NC license
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    Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

    D. Diesing and E. Hasselbrink, Chem. Soc. Rev., 2016, 45, 3747
    DOI: 10.1039/C5CS00932D

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