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Issue 46, 2016
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High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study

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Abstract

We explored the possibility of producing a high-mobility two-dimensional electron gas (2DEG) in the LaAlO3/SrGeO3 and LaGaO3/BaSnO3 heterostructures using first-principles electronic structure calculations. Our results show that the 2DEG occurs at n-type LaAlO3/SrGeO3 and LaGaO3/BaSnO3 interfaces. Compared to the prototype LaAlO3/SrTiO3, LaAlO3/SrGeO3 and LaGaO3/BaSnO3 systems yield comparable total interfacial charge carrier density but much lower electron effective mass (nearly half the value of LaAlO3/SrTiO3), thus resulting in about twice larger electron mobility and enhanced interfacial conductivity. This work demonstrates that SrGeO3 and BaSnO3 can be potential substrate materials to achieve a high-mobility 2DEG in the perovskite-oxide heterostructures.

Graphical abstract: High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study

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Publication details

The article was received on 11 Aug 2016, accepted on 27 Oct 2016 and first published on 27 Oct 2016


Article type: Paper
DOI: 10.1039/C6CP05572A
Citation: Phys. Chem. Chem. Phys., 2016,18, 31924-31929
  • Open access: Creative Commons BY-NC license
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    High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study

    Y. Wang, W. Tang, J. Cheng, S. Nazir and K. Yang, Phys. Chem. Chem. Phys., 2016, 18, 31924
    DOI: 10.1039/C6CP05572A

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