Bi2MoO6/BiVO4 heterojunction electrode with enhanced photoelectrochemical properties

Ying Ma; Yulong Jia; Lina Wang; Min Yang; Yingpu Bi; Yanxing Qi

doi:10.1039/C5CP07784B

Bi₂MoO₆/BiVO₄ heterojunction electrode with enhanced photoelectrochemical properties

Ying Ma,^a^b Yulong Jia,^a^b Lina Wang,^a^b Min Yang,^a Yingpu Bi*^a and Yanxing Qi*^a

Author affiliations

* Corresponding authors

^a State Key Laboratory for Oxo Synthesis & Selective Oxidation, and National Engineering Research Center for Fine Petrochemical Intermediates, Lanzhou Institute of Chemical Physics, CAS, Lanzhou 730000, China
E-mail: maying@licp.cas.cn, qiyx@licp.cas.cn

^b University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

Herein, we demonstrate the synthesis of a Bi₂MoO₆ nanorod array followed by the deposition of a BiVO₄ absorber layer. This heterojunction yielded a photocurrent density of 250 μA cm⁻² at 0.8 V_SCE, which is 21 times that produced by a planar Bi₂MoO₆ array under the same conditions. Moreover, in situ X-ray photoelectron spectroscopy clearly confirmed the improvement of the electron transport and charge separation afforded by the heterostructure, features that efficiently enhanced the photoelectrochemical properties of the array.

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Publication details

The article was received on 16 Dec 2015, accepted on 15 Jan 2016 and first published on 15 Jan 2016

Article type: Communication

DOI: 10.1039/C5CP07784B

Citation: Phys. Chem. Chem. Phys., 2016,18, 5091-5094

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Bi₂MoO₆/BiVO₄ heterojunction electrode with enhanced photoelectrochemical properties

Y. Ma, Y. Jia, L. Wang, M. Yang, Y. Bi and Y. Qi, Phys. Chem. Chem. Phys., 2016, 18, 5091
DOI: 10.1039/C5CP07784B
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Physical Chemistry Chemical Physics

Bi₂MoO₆/BiVO₄ heterojunction electrode with enhanced photoelectrochemical properties

Abstract

Supplementary files

Publication details

Bi₂MoO₆/BiVO₄ heterojunction electrode with enhanced photoelectrochemical properties

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