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Issue 2, 2016
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Deep traps can reduce memory effects of shallower ones in scintillators

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Abstract

X-ray induced luminescence sensitization results have been obtained on three commercially relevant scintillators, namely CsI:Tl, YAG:Ce and LSO:Ce. The obtained curves have been used to validate a model based on the competition among trapping and recombination of free charge carriers. The model was able to accurately describe the complex phenomenology of the detected sensitization curves. We also used the model to predict the role of a high temperature and concentration trap in shaping the sensitization curves. Based on these modelling results we also proposed a novel, and rather counterintuitive, strategy to deal with the sensitization phenomenon based on the deliberate introduction of deep traps which can significantly reduce the bright burn effect.

Graphical abstract: Deep traps can reduce memory effects of shallower ones in scintillators

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Publication details

The article was received on 23 Sep 2015, accepted on 01 Dec 2015 and first published on 01 Dec 2015


Article type: Paper
DOI: 10.1039/C5CP05711F
Author version available: Download Author version (PDF)
Citation: Phys. Chem. Chem. Phys., 2016,18, 1178-1184
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    Deep traps can reduce memory effects of shallower ones in scintillators

    F. Moretti, G. Patton, A. Belsky, A. G. Petrosyan and C. Dujardin, Phys. Chem. Chem. Phys., 2016, 18, 1178
    DOI: 10.1039/C5CP05711F

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