Jump to main content
Jump to site search

Issue 4, 2016
Previous Article Next Article

Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

Author affiliations

Abstract

Our work is related to the liquid phase epitaxy-based development of new scintillating screens for high-resolution X-ray imaging. We successfully grew undoped and Tb, Eu and Ce-doped GdAlO3 as well as GdxLu1−xAlO3 single crystalline films on YAlO3 substrates. We studied crystallization conditions as a function of melt composition, growth temperature and lattice mismatch between the film and the substrate. The film composition was measured by using an electron microprobe and the morphology of the film surface was studied by scanning electron microscopy. X-Ray diffraction was used to characterize the crystal structure and the mismatch between the film and the substrate. In addition, the light yield of the Eu3+-doped films, as well as the obtained spatial resolution show that GdxLu1−xAlO3 may advantageously compete with existing thin film scintillators in particular energy ranges.

Graphical abstract: Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

Back to tab navigation

Publication details

The article was received on 01 Oct 2015, accepted on 10 Dec 2015 and first published on 11 Dec 2015


Article type: Paper
DOI: 10.1039/C5CE01938A
Author version available: Download Author version (PDF)
Citation: CrystEngComm, 2016,18, 608-615
  •   Request permissions

    Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

    F. Riva, P.-A. Douissard, T. Martin, F. Carlà, Y. Zorenko and C. Dujardin, CrystEngComm, 2016, 18, 608
    DOI: 10.1039/C5CE01938A

Search articles by author

Spotlight

Advertisements