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Issue 2, 2016
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Iodide surface decoration: a facile and efficacious approach to modulating the band energy level of semiconductors for high-performance visible-light photocatalysis

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Abstract

We herein report a facile and general approach to modulating the band energy level of semiconductors for visible-light photocatalysis via iodide surface decoration. This strategy enables the wide-band-gap Bi2O2CO3 to possess a continuously tunable band gap and profoundly boosted visible-light photocatalytic performance for dye degradation and NO removal.

Graphical abstract: Iodide surface decoration: a facile and efficacious approach to modulating the band energy level of semiconductors for high-performance visible-light photocatalysis

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Publication details

The article was received on 03 Oct 2015, accepted on 22 Oct 2015 and first published on 22 Oct 2015


Article type: Communication
DOI: 10.1039/C5CC08239K
Citation: Chem. Commun., 2016,52, 354-357
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    Iodide surface decoration: a facile and efficacious approach to modulating the band energy level of semiconductors for high-performance visible-light photocatalysis

    H. Huang, K. Xiao, S. Yu, F. Dong, T. Zhang and Y. Zhang, Chem. Commun., 2016, 52, 354
    DOI: 10.1039/C5CC08239K

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