Jump to main content
Jump to site search

Issue 31, 2015
Previous Article Next Article

From non-detectable to decent: replacement of oxygen with sulfur in naphthalene diimide boosts electron transport in organic thin-film transistors (OTFT)

Author affiliations

Abstract

Enhancing the electron mobility of organic conjugated materials without tedious modification or synthesis is highly desirable and practical. In this research, we demonstrated that the electron mobility of naphthalene diimide (NDI) in thin film transistors (TFTs) under ambient conditions can be dramatically enhanced through a simple step reaction by replacing oxygen atoms with sulfur atoms. The electron mobilities of the as-prepared compounds range from non-detectable (parent NDI), to 3.0 × 10−4 cm2 V−1 s−1 (NDI-1S), 3.0 × 10−3 cm2 V−1 s−1 (NDI-3S), 3.7 × 10−3 cm2 V−1 s−1 (NDI-2S-cis), and 0.01 cm2 V−1 s−1 (NDI-2S-trans) with on/off ratios as high as 4 × 105. Our primary result suggests that thionation could be a promising method to tune the band position and bandgap of organic semiconductors for high performance TFTs.

Graphical abstract: From non-detectable to decent: replacement of oxygen with sulfur in naphthalene diimide boosts electron transport in organic thin-film transistors (OTFT)

Back to tab navigation

Supplementary files

Publication details

The article was received on 27 May 2015, accepted on 02 Jul 2015 and first published on 03 Jul 2015


Article type: Paper
DOI: 10.1039/C5TC01519G
Author version available: Download Author version (PDF)
Citation: J. Mater. Chem. C, 2015,3, 8219-8224
  •   Request permissions

    From non-detectable to decent: replacement of oxygen with sulfur in naphthalene diimide boosts electron transport in organic thin-film transistors (OTFT)

    W. Chen, J. Zhang, G. Long, Y. Liu and Q. Zhang, J. Mater. Chem. C, 2015, 3, 8219
    DOI: 10.1039/C5TC01519G

Search articles by author

Spotlight

Advertisements