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Issue 19, 2015
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Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

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Abstract

A plasma enhanced ALD process for Ru using RuO4 and H2-plasma is reported at sample temperatures ranging from 50 °C to 100 °C. At 50 °C, low impurity content Ru thin films were grown with a saturated growth rate of 0.11 nm per cycle. A study of the influence of various process parameters on the Ru film properties is given.

Graphical abstract: Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

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Publication details

The article was received on 17 Mar 2015, accepted on 20 Apr 2015 and first published on 21 Apr 2015


Article type: Communication
DOI: 10.1039/C5TC00751H
Author version available: Download Author version (PDF)
Citation: J. Mater. Chem. C, 2015,3, 4848-4851
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    Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

    M. M. Minjauw, J. Dendooven, B. Capon, M. Schaekers and C. Detavernier, J. Mater. Chem. C, 2015, 3, 4848
    DOI: 10.1039/C5TC00751H

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