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Issue 24, 2015
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Lithium ion assisted hydration of metal ions in non-aqueous sol–gel inks for high performance metal oxide thin-film transistors

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Abstract

The role of Li ions in lowering the dehydroxylation temperature of non-aqueous sol–gel inks for metal oxide thin film transistors (TFTs) was demonstrated for the first time. As a key mechanism in the lowering of the dehydroxylation temperature, the hydration of sol–gel inks by Li ions, which have a high charge density, was verified through various material analysis tools, such as Raman spectroscopy, TG-DTA, spectroscopic ellipsometry, XPS, and FT-IR. The hydration effect of Li ions on electronic properties was confirmed. This was done by evaluating the electrical properties of metal oxide TFTs that were fabricated at 300 °C using various kinds of sol–gel inks with and without Li ions. The results revealed that the dehydroxylation temperature was typically lowered by about 20 to 50 °C with the addition of Li ions to various kinds of non-aqueous sol–gel inks. Moreover, the Li-added metal oxide TFTs had mobilities that were several times higher than those of their undoped counterparts.

Graphical abstract: Lithium ion assisted hydration of metal ions in non-aqueous sol–gel inks for high performance metal oxide thin-film transistors

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Publication details

The article was received on 04 Feb 2015, accepted on 13 May 2015 and first published on 14 May 2015


Article type: Paper
DOI: 10.1039/C5TC00341E
Citation: J. Mater. Chem. C, 2015,3, 6276-6283
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    Lithium ion assisted hydration of metal ions in non-aqueous sol–gel inks for high performance metal oxide thin-film transistors

    J. H. Park, J. Y. Oh, H. K. Baik and T. I. Lee, J. Mater. Chem. C, 2015, 3, 6276
    DOI: 10.1039/C5TC00341E

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