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Issue 12, 2015
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An ultrafast response grating structural ZnO photodetector with back-to-back Schottky barriers produced by hydrothermal growth

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Abstract

An ultrafast response metal–semiconductor–metal type ZnO ultraviolet photodetector was fabricated by ultraviolet nanoimprint lithography (UV-NIL) with hydrothermal synthesis. The extremely fast response time was due to the Schottky barrier formation attributed to the control of the hydrothermal growth time and grating structure of ZnO, produced by a position-controlled pattering method of UV-NIL. With an on/off frequency of ultraviolet light of 2 kHz using an optical chopper, the device exhibits a rising time of 43 μs and a falling time of 54 μs at a low bias voltage (0.5 V) with a responsivity of 22.1 A W−1 in the active area of 5 × 5 μm2. In comparison to other fast response ZnO photodetectors, our device definitely uses easy and low-cost fabrication methods as well as exhibits high performance.

Graphical abstract: An ultrafast response grating structural ZnO photodetector with back-to-back Schottky barriers produced by hydrothermal growth

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Publication details

The article was received on 08 Dec 2014, accepted on 25 Jan 2015 and first published on 27 Jan 2015


Article type: Communication
DOI: 10.1039/C4TC02821J
Author version available: Download Author version (PDF)
Citation: J. Mater. Chem. C, 2015,3, 2737-2743
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    An ultrafast response grating structural ZnO photodetector with back-to-back Schottky barriers produced by hydrothermal growth

    C. Park, J. Lee, H. So and W. S. Chang, J. Mater. Chem. C, 2015, 3, 2737
    DOI: 10.1039/C4TC02821J

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