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Issue 3, 2015
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Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: synthesis, characterization and electronic properties

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Abstract

Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V−1 s−1.

Graphical abstract: Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: synthesis, characterization and electronic properties

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Publication details

The article was received on 24 Sep 2014, accepted on 08 Nov 2014 and first published on 01 Dec 2014


Article type: Paper
DOI: 10.1039/C4TC02158D
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Citation: J. Mater. Chem. C, 2015,3, 674-685
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    Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: synthesis, characterization and electronic properties

    C. Niebel, Y. Kim, C. Ruzié, J. Karpinska, B. Chattopadhyay, G. Schweicher, A. Richard, V. Lemaur, Y. Olivier, J. Cornil, A. R. Kennedy, Y. Diao, W. Lee, S. Mannsfeld, Z. Bao and Y. H. Geerts, J. Mater. Chem. C, 2015, 3, 674
    DOI: 10.1039/C4TC02158D

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