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Issue 4, 2015
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Origin of the increased open circuit voltage in PbS–CdS core–shell quantum dot solar cells

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Abstract

Lead sulfide quantum dots (PbS QDs) show great potential for efficient, low cost photovoltaic applications. Currently, device efficiencies are limited by the high density of trap states caused by lattice imperfections on the QD surface. Introducing a thin shell of a wide bandgap semiconductor to the QD surface is a promising method to passivate these trap states. Here we demonstrate solar cells made from PbS–CdS core–shell QDs, yielding a 147 mV increase in VOC compared to core only PbS QDs. We explore the physical reason for this enhancement and demonstrate that it is indeed caused by improved passivation of the PbS surface by the CdS shell, leading to a lower electron trap density.

Graphical abstract: Origin of the increased open circuit voltage in PbS–CdS core–shell quantum dot solar cells

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Publication details

The article was received on 12 Sep 2014, accepted on 27 Oct 2014 and first published on 29 Oct 2014


Article type: Paper
DOI: 10.1039/C4TA04785K
Citation: J. Mater. Chem. A, 2015,3, 1450-1457
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    Origin of the increased open circuit voltage in PbS–CdS core–shell quantum dot solar cells

    M. J. Speirs, D. M. Balazs, H.-H. Fang, L.-H. Lai, L. Protesescu, M. V. Kovalenko and M. A. Loi, J. Mater. Chem. A, 2015, 3, 1450
    DOI: 10.1039/C4TA04785K

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