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Issue 114, 2015
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Electrochemical Ostwald ripening and surface diffusion in the galvanic displacement reaction: control over particle growth

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Abstract

We report the role of electrochemical Ostwald ripening and the galvanic displacement reaction in uniform particle formation on ion bombarded amorphous (i.e., composed of random atomic spacings) Ge (a-Ge) surfaces compared to crystalline germanium (c-Ge). Silver growth on c-Ge and a-Ge substrates by electroless deposition has been studied by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM), and energy dispersive X-ray spectroscopy (EDX). Introduction of defects can provide a control over particle growth by the galvanic displacement reaction that may offer continuous film growth up to a definite thickness. The possibility of surface diffusion and its consequences have also been discussed.

Graphical abstract: Electrochemical Ostwald ripening and surface diffusion in the galvanic displacement reaction: control over particle growth

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Publication details

The article was received on 01 Oct 2015, accepted on 19 Oct 2015 and first published on 19 Oct 2015


Article type: Paper
DOI: 10.1039/C5RA20297C
Citation: RSC Adv., 2015,5, 94380-94387
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    Electrochemical Ostwald ripening and surface diffusion in the galvanic displacement reaction: control over particle growth

    T. Ghosh, P. Karmakar and B. Satpati, RSC Adv., 2015, 5, 94380
    DOI: 10.1039/C5RA20297C

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