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Issue 75, 2015
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Enhancement of light emission in GaAs epilayers with graphene quantum dots

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Abstract

A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml−1. On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.

Graphical abstract: Enhancement of light emission in GaAs epilayers with graphene quantum dots

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Publication details

The article was received on 18 May 2015, accepted on 26 Jun 2015 and first published on 30 Jun 2015


Article type: Paper
DOI: 10.1039/C5RA09315E
Citation: RSC Adv., 2015,5, 60908-60913
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    Enhancement of light emission in GaAs epilayers with graphene quantum dots

    T. N. Lin, K. H. Chih, M. C. Cheng, C. T. Yuan, C. L. Hsu, J. L. Shen, J. L. Hou, C. H. Wu, W. C. Chou and T. Y. Lin, RSC Adv., 2015, 5, 60908
    DOI: 10.1039/C5RA09315E

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