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Issue 115, 2015
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Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors

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Abstract

We present a simple method to microfluidically align and trap 1D nanostructures from suspension at well-defined positions on a receiver substrate for the fabrication of single-nanowire field effect transistors (NW FETs). Our approach allows for subsequent contacting of deposited NWs via standard UV-lithography. We demonstrate that silicon as well as copper(II) oxide NWs can be processed, and that up to 13 out of 32 designated trapping sites are occupied with single-NW FETs.

Graphical abstract: Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors

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Publication details

The article was received on 02 Oct 2015, accepted on 28 Oct 2015 and first published on 29 Oct 2015


Article type: Communication
DOI: 10.1039/C5RA20414C
Author version available: Download Author version (PDF)
Citation: RSC Adv., 2015,5, 94702-94706
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    Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors

    A. Gang, N. Haustein, L. Baraban, W. Weber, T. Mikolajick, J. Thiele and G. Cuniberti, RSC Adv., 2015, 5, 94702
    DOI: 10.1039/C5RA20414C

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