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Issue 120, 2015
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Solid-state graphene formation via a nickel carbide intermediate phase

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Abstract

Direct formation of graphene with a controlled number of graphitic layers on dielectric surfaces is highly desired for practical applications but still challenging. Distinguished from the conventional chemical vapor deposition methods, a solid-state rapid thermal processing (RTP) method can achieve high-quality graphene formation on dielectric surfaces without transfer. However, little research is available to elucidate the graphene growth mechanism in the RTP method (heating rate ∼15 °C s−1). Here we show a solid-state transformation mechanism in which a metastable nickel carbide (Ni3C) intermediate phase plays a critical role in transforming amorphous carbon to two dimensional crystalline graphene and contributing to the autonomous Ni evaporation in the RTP process. The formation, migration and decomposition of Ni3C are confirmed to be responsible for graphene formation and Ni evaporation. The Ni3C-assisted graphene formation mechanism expands the understanding of Ni-catalyzed graphene formation and provides insightful guidance for controlled growth of graphene through the solid-state transformation process.

Graphical abstract: Solid-state graphene formation via a nickel carbide intermediate phase

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Publication details

The article was received on 12 Sep 2015, accepted on 04 Nov 2015 and first published on 10 Nov 2015


Article type: Paper
DOI: 10.1039/C5RA18682J
Author version available: Download Author version (PDF)
Citation: RSC Adv., 2015,5, 99037-99043
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    Solid-state graphene formation via a nickel carbide intermediate phase

    W. Xiong, Y. S. Zhou, W. J. Hou, T. Guillemet, J. F. Silvain, Y. Gao, M. Lahaye, E. Lebraud, S. Xu, X. W. Wang, D. A. Cullen, K. L. More, L. Jiang and Y. F. Lu, RSC Adv., 2015, 5, 99037
    DOI: 10.1039/C5RA18682J

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