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Issue 104, 2015
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Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

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Abstract

Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal–semiconductor–metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W−1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of ∼22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current–voltage measurements.

Graphical abstract: Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

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Publication details

The article was received on 15 Jul 2015, accepted on 05 Oct 2015 and first published on 05 Oct 2015


Article type: Paper
DOI: 10.1039/C5RA13921J
Author version available: Download Author version (PDF)
Citation: RSC Adv., 2015,5, 85523-85529
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    Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

    P. Sharma, R. Singh, V. Awasthi, S. K. Pandey, V. Garg and S. Mukherjee, RSC Adv., 2015, 5, 85523
    DOI: 10.1039/C5RA13921J

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