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Issue 73, 2015
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Dopant-configuration controlled carrier scattering in graphene

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Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron–electron or electron–phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (La).

Graphical abstract: Dopant-configuration controlled carrier scattering in graphene

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The article was received on 25 Mar 2015, accepted on 30 Jun 2015 and first published on 30 Jun 2015

Article type: Paper
DOI: 10.1039/C5RA05338B
Author version available: Download Author version (PDF)
Citation: RSC Adv., 2015,5, 59556-59563
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    Dopant-configuration controlled carrier scattering in graphene

    B. Anand, M. Karakaya, G. Prakash, S. S. Sankara Sai, R. Philip, P. Ayala, A. Srivastava, A. K. Sood, A. M. Rao and R. Podila, RSC Adv., 2015, 5, 59556
    DOI: 10.1039/C5RA05338B

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