Bipolar resistive switching behavior of CaTiO3 films grown by hydrothermal epitaxy $(document).ready(function() { if (!$("html").hasClass("ie8")) { $.ajax({ url: "https://crossmark-cdn.crossref.org/widget/v2.0/widget.js", dataType: "script", cache: true }).done(function() { $(".crossmark-button").addClass("visible"); }); } });

Abstract

Epitaxial CaTiO₃ films, with smooth and dense surface, were fabricated by the promising hydrothermal synthesis on the Nb:SrTiO₃(001) substrate. The resulting coated substrates was used to prepare Pt/CaTiO₃/Nb:SrTiO₃ heterostructure devices. The devices present a bipolar resistive switching behavior. Both high and low resistance states have not obvious degradation within ∼3 h and 1000 cycles measurements, which demonstrates the devices possess excellent retention and endurance characteristics. The resistive switching behavior of the devices can be explained by the trap-controlled space charge limited current conduction mechanism. Moreover, the modulation of the Pt/CaTiO₃ Schottky-like barrier under an applied electric field is also responsible for the switching behavior, in the carrier injection-trapped/detrapped process.