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Issue 20, 2015
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The role of uniaxial strain in tailoring the interfacial properties of LaAlO3/SrTiO3 heterostructure

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Abstract

The two-dimensional electron gas (2DEG) at the (LaO)+1/(TiO2)0 n-type interface in LaAlO3/SrTiO3 (LAO/STO) heterostructures (HS) opens up new opportunities in next-generation nanoelectronic devices because of its unique and tunable physical properties. In this respect, strain plays an important role in tailoring the 2DEG properties of STO-based HS systems. Our first-principles calculations reveal that a uniaxial strain along the [100]-direction of the STO substrate significantly affects the chemical bonding of LAO and STO near the interfacial region, which can further alter the interfacial electronic properties. We find that uniaxial tensile strain can considerably increase the interfacial charge carrier density, which is consistent with the recent experimental findings in [Moler et al., Nat. Mater., 2013, 12, 1091]. Our results also indicate that uniaxial compressive strain on STO can lead to higher interfacial charge carrier density and larger magnetic moments than uniaxial tensile strain, and further that the 2DEG in the compressively strained systems displays superior charge confinement in the c-direction. For the sake of comparison, the effects of ab-plane biaxial compressive and tensile strains applied on the STO substrate were also investigated. It is found that biaxial tensile strain improves the interfacial electronic properties and magnetic moments, while biaxial compressive strain shows the opposite effect.

Graphical abstract: The role of uniaxial strain in tailoring the interfacial properties of LaAlO3/SrTiO3 heterostructure

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Publication details

The article was received on 05 Dec 2014, accepted on 19 Jan 2015 and first published on 22 Jan 2015


Article type: Paper
DOI: 10.1039/C4RA15866K
Citation: RSC Adv., 2015,5, 15682-15689
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    The role of uniaxial strain in tailoring the interfacial properties of LaAlO3/SrTiO3 heterostructure

    S. Nazir, M. Behtash and K. Yang, RSC Adv., 2015, 5, 15682
    DOI: 10.1039/C4RA15866K

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