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Issue 36, 2015
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Nitrile-substituted thienyl and phenyl units as building blocks for high performance n-type polymer semiconductors

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Abstract

Two novel polymers PDPP3T-CN and PDPPTPT-CN containing nitrile-substituted thienyl and phenyl units were designed and synthesized. The influence of nitrile groups on the electronic properties and charge-carrier transport of the polymers was thoroughly investigated and highlighted by comparing with the corresponding non-nitrile substituted polymers. Experimental results showed that the introduction of nitrile groups lowered the HOMO and LUMO energy levels of polymers by about 0.3 eV and 0.2 eV, respectively. Thin film transistor characteristics displayed that both polymers exhibited electron-dominated ambipolar behavior under ambient conditions. The highest electron/hole mobilities were 0.18/0.0083 cm2 V−1 s−1 for PDPPTPT-CN and 0.09/0.0017 cm2 V−1 s−1 for PDPP3T-CN, one of the highest electron mobilities for DPP-based polymers measured under ambient conditions with bottom-gate/top-contact device configurations.

Graphical abstract: Nitrile-substituted thienyl and phenyl units as building blocks for high performance n-type polymer semiconductors

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Publication details

The article was received on 27 May 2015, accepted on 28 Jul 2015 and first published on 29 Jul 2015


Article type: Paper
DOI: 10.1039/C5PY00804B
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Citation: Polym. Chem., 2015,6, 6579-6584
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    Nitrile-substituted thienyl and phenyl units as building blocks for high performance n-type polymer semiconductors

    Y. Xiong, X. Qiao and H. Li, Polym. Chem., 2015, 6, 6579
    DOI: 10.1039/C5PY00804B

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