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Issue 3, 2015
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Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices

Ying-Hsuan Chou,a  Hsuan-Chun Chang,a  Cheng-Liang Liu*b  and  Wen-Chang Chen*a 
Author affiliations

* Corresponding authors

a Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
E-mail: chenwc@ntu.edu.tw

b Department of Chemical and Materials Engineering, National Central University, Taoyuan, 32001 Taiwan
E-mail: clliu@ncu.edu.tw

Abstract

In this review, we present the effects of the chemical structure and composition of polymer or composite electrets on tuning the memory characteristics of the non-volatile organic field effect transistor (OFET) memory devices, including surface polarity, π-conjugation length, architecture, donor–acceptor strength, and interface energy barrier. The recent progress in developing polymer-based charge storage electrets is highlighted in order to provide insights into understanding the operation mechanism and the molecular design–memory properties relationship, as well as improving the overall performance of OFET memory devices.

Graphical abstract: Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices

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Publication details

The article was received on 02 Sep 2014, accepted on 30 Sep 2014 and first published on 30 Sep 2014


Article type: Review Article
DOI: 10.1039/C4PY01213E
Author version available: Download Author version (PDF)
Citation: Polym. Chem., 2015,6, 341-352
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    Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices

    Y. Chou, H. Chang, C. Liu and W. Chen, Polym. Chem., 2015, 6, 341
    DOI: 10.1039/C4PY01213E

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