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Issue 27, 2015
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A quinoxaline based N-heteroacene interfacial layer for efficient hole-injection in quantum dot light-emitting diodes

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Abstract

A series of N-heterocyclic quinoxaline derivatives was successfully synthesized and applied as hole transport layers in quantum dot light-emitting diodes (QLEDs). By inducing sp2 N-atoms into the quinoxaline backbone, the electron affinity of the obtained material was enhanced, and its optical properties and bandgap became tunable. Quinoxaline based N-heteroacenes show a narrow bandgap, high thermal stability, and aligned film morphology. The resulting N-heteroacene polymer based QLED exhibits superior performance to poly(9-vinylcarbazole) based QLED. This study presents a strategy towards the design of novel N-rich molecules for the fabrication of QLEDs with improved performance.

Graphical abstract: A quinoxaline based N-heteroacene interfacial layer for efficient hole-injection in quantum dot light-emitting diodes

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Publication details

The article was received on 15 May 2015, accepted on 03 Jun 2015 and first published on 08 Jun 2015


Article type: Communication
DOI: 10.1039/C5NR03197D
Citation: Nanoscale, 2015,7, 11531-11535
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    A quinoxaline based N-heteroacene interfacial layer for efficient hole-injection in quantum dot light-emitting diodes

    L. Bai, X. Yang, C. Y. Ang, K. T. Nguyen, T. Ding, P. Bose, Q. Gao, A. K. Mandal, X. W. Sun, H. V. Demir and Y. Zhao, Nanoscale, 2015, 7, 11531
    DOI: 10.1039/C5NR03197D

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