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Issue 9, 2015
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Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

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Abstract

Introduction of an ultrathin (2 nm) film of cobalt oxide (CoOx) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiOx coating yields stable photoelectrodes with photocurrent-onset potentials of ∼−240 mV relative to the equilibrium potential for O2(g) evolution and current densities of ∼28 mA cm−2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np+ buried homojunctions.

Graphical abstract: Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

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Publication details

The article was received on 30 May 2015, accepted on 15 Jul 2015 and first published on 15 Jul 2015


Article type: Communication
DOI: 10.1039/C5EE01687H
Citation: Energy Environ. Sci., 2015,8, 2644-2649
  • Open access: Creative Commons BY-NC license
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    Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

    X. Zhou, R. Liu, K. Sun, D. Friedrich, M. T. McDowell, F. Yang, S. T. Omelchenko, F. H. Saadi, A. C. Nielander, S. Yalamanchili, K. M. Papadantonakis, B. S. Brunschwig and N. S. Lewis, Energy Environ. Sci., 2015, 8, 2644
    DOI: 10.1039/C5EE01687H

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