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Issue 1, 2015
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Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

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Abstract

We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm−3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ∼3 μm and ∼8 μm, respectively. Hall mobilities approach those achieved for GaAs grown by metal–organic chemical vapor deposition, 1000–4200 cm2 V−1 s−1 for n-GaAs and 50–240 cm V−1 s−1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.

Graphical abstract: Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

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The article was received on 23 Jun 2014, accepted on 01 Sep 2014 and first published on 01 Sep 2014


Article type: Paper
DOI: 10.1039/C4EE01943A
Citation: Energy Environ. Sci., 2015,8, 278-285
  • Open access: Creative Commons BY license
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    Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    A. J. Ritenour, J. W. Boucher, R. DeLancey, A. L. Greenaway, S. Aloni and S. W. Boettcher, Energy Environ. Sci., 2015, 8, 278
    DOI: 10.1039/C4EE01943A

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