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Issue 11, 2015
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Photocurrent generation with two-dimensional van der Waals semiconductors

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Abstract

Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D materials benefit from sizable mobilities and large on/off ratios, due to the large modulation achievable via the gate field-effect. Moreover, being mechanically strong and flexible, these materials can withstand large strain (>10%) before rupture, making them interesting for strain engineering and flexible devices. Even in their single layer form, semiconducting 2D materials have demonstrated efficient light absorption, enabling large responsivity in photodetectors. Therefore, semiconducting layered 2D materials are strong candidates for optoelectronic applications, especially for photodetection. Here, we review the state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.

Graphical abstract: Photocurrent generation with two-dimensional van der Waals semiconductors

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Publication details

The article was received on 04 Feb 2015 and first published on 24 Apr 2015


Article type: Review Article
DOI: 10.1039/C5CS00106D
Author version available: Download Author version (PDF)
Citation: Chem. Soc. Rev., 2015,44, 3691-3718
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    Photocurrent generation with two-dimensional van der Waals semiconductors

    M. Buscema, J. O. Island, D. J. Groenendijk, S. I. Blanter, G. A. Steele, H. S. J. van der Zant and A. Castellanos-Gomez, Chem. Soc. Rev., 2015, 44, 3691
    DOI: 10.1039/C5CS00106D

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