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Issue 9, 2015
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Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

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Abstract

In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.

Graphical abstract: Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

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Publication details

The article was received on 28 Jul 2014 and first published on 20 Oct 2014


Article type: Review Article
DOI: 10.1039/C4CS00256C
Author version available: Download Author version (PDF)
Citation: Chem. Soc. Rev., 2015,44, 2744-2756
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    Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

    Y. Shi, H. Li and L. Li, Chem. Soc. Rev., 2015, 44, 2744
    DOI: 10.1039/C4CS00256C

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