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Issue 100, 2015
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A mercury(II) ion sensor device based on an organic field effect transistor with an extended-gate modified by dipicolylamine

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Abstract

Herein, we report an organic field effect transistor (OFET) with an extended-gate modified by an artificial receptor for the detection of mercury(II) ions (Hg2+) in water. The sensor device is easy to fabricate, reusable, disposable, and portable. Thus OFET sensors could be applied for low-cost on-site detection of Hg2+.

Graphical abstract: A mercury(ii) ion sensor device based on an organic field effect transistor with an extended-gate modified by dipicolylamine

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Publication details

The article was received on 21 Sep 2015, accepted on 06 Oct 2015 and first published on 08 Oct 2015


Article type: Communication
DOI: 10.1039/C5CC07893H
Citation: Chem. Commun., 2015,51, 17666-17668
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    A mercury(II) ion sensor device based on an organic field effect transistor with an extended-gate modified by dipicolylamine

    T. Minami, Y. Sasaki, T. Minamiki, P. Koutnik, P. Anzenbacher and S. Tokito, Chem. Commun., 2015, 51, 17666
    DOI: 10.1039/C5CC07893H

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