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Issue 92, 2015
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Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

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Abstract

This commmunication presents a study of atomic layer deposition of Al2O3 on transition metal dichalcogenide (TMD) two-dimensional films which is crucial for use of these promising materials for electronic applications. Deposition of Al2O3 on pristine chemical vapour deposited MoS2 and WS2 crystals is demonstrated. This deposition is dependent on the number of TMD layers as there is no deposition on pristine monolayers. In addition, we show that it is possible to reliably seed the deposition, even on the monolayer, using non-covalent functionalisation with perylene derivatives as anchor unit.

Graphical abstract: Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

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Publication details

The article was received on 10 Jul 2015, accepted on 20 Sep 2015 and first published on 24 Sep 2015


Article type: Communication
DOI: 10.1039/C5CC05726D
Author version available: Download Author version (PDF)
Citation: Chem. Commun., 2015,51, 16553-16556
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    Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

    C. Wirtz, T. Hallam, C. P. Cullen, N. C. Berner, M. O'Brien, M. Marcia, A. Hirsch and G. S. Duesberg, Chem. Commun., 2015, 51, 16553
    DOI: 10.1039/C5CC05726D

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