Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

A. Delabie; M. Caymax; B. Groven; M. Heyne; K. Haesevoets; J. Meersschaut; T. Nuytten; H. Bender; T. Conard; P. Verdonck; S. Van Elshocht; S. De Gendt; M. Heyns; K. Barla; I. Radu; A. Thean

doi:10.1039/C5CC05272F

Low temperature deposition of 2D WS₂ layers from WF₆ and H₂S precursors: impact of reducing agents

A. Delabie,*^ab M. Caymax,^a B. Groven,^ab M. Heyne,^ab K. Haesevoets,^ab J. Meersschaut,^a T. Nuytten,^a H. Bender,^a T. Conard,^a P. Verdonck,^a S. Van Elshocht,^a S. De Gendt,^ab M. Heyns,^ac K. Barla,^a I. Radu^a and A. Thean^a

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* Corresponding authors

^a Imec, Kapeldreef 75, B-3001 Leuven, Belgium
E-mail: Annelies.Delabie@imec.be

^b KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven, Belgium

^c KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven, Belgium

Abstract

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS₂ from WF₆ and H₂S precursors. Nanocrystalline WS₂ layers with a two-dimensional structure can be obtained at low deposition temperatures (300–450 °C) without using a template or anneal.

Chemical Communications

Low temperature deposition of 2D WS₂ layers from WF₆ and H₂S precursors: impact of reducing agents

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Low temperature deposition of 2D WS₂ layers from WF₆ and H₂S precursors: impact of reducing agents

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