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Issue 61, 2015
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Microwave-assisted solution–liquid–solid growth of Ge1−xSnx nanowires with high tin content

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Abstract

A microwave assisted growth procedure for the first bottom-up synthesis of germanium tin alloy (Ge1−xSnx) nanowires with constant diameter along their axis was developed. Ge1−xSnx nanowires with mean diameters of 190 ± 30 nm and a homogeneous distribution of 12.4 ± 0.7% Sn in Ge have been synthesized.

Graphical abstract: Microwave-assisted solution–liquid–solid growth of Ge1−xSnx nanowires with high tin content

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Publication details

The article was received on 01 May 2015, accepted on 26 Jun 2015 and first published on 29 Jun 2015


Article type: Communication
DOI: 10.1039/C5CC03639A
Citation: Chem. Commun., 2015,51, 12282-12285
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    Microwave-assisted solution–liquid–solid growth of Ge1−xSnx nanowires with high tin content

    S. Barth, M. S. Seifner and J. Bernardi, Chem. Commun., 2015, 51, 12282
    DOI: 10.1039/C5CC03639A

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