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Issue 13, 2014
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Small band gap polymers incorporating a strong acceptor, thieno[3,2-b]thiophene-2,5-dione, with p-channel and ambipolar charge transport characteristics

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Abstract

We present new donor–acceptor semiconducting polymers based on a strong acceptor unit, thieno[3,2-b]thiophene-2,5-dione (TTD). The polymers exhibit a deep LUMO energy level of around −4 eV while preserving a relatively low-lying HOMO energy level of below −5 eV and a quite small optical band gap of 1.2 eV. Interestingly, bottom-gate-top-contact transistor devices based on the polymers demonstrate p-channel behavior with high hole-mobilites of 1.38 cm2 V−1 s−1, whereas top-gate-bottom-contact devices show ambipolar behavior with hole and electron mobilities of ∼0.12 and ∼0.20 cm2 V−1 s−1, respectively. These results indicate the great potential of TTD to be used as the building unit for high-performance semiconducting polymers.

Graphical abstract: Small band gap polymers incorporating a strong acceptor, thieno[3,2-b]thiophene-2,5-dione, with p-channel and ambipolar charge transport characteristics

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Publication details

The article was received on 03 Dec 2013, accepted on 22 Jan 2014 and first published on 22 Jan 2014


Article type: Communication
DOI: 10.1039/C3TC32386B
Author version available: Download Author version (PDF)
Citation: J. Mater. Chem. C, 2014,2, 2307-2312
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    Small band gap polymers incorporating a strong acceptor, thieno[3,2-b]thiophene-2,5-dione, with p-channel and ambipolar charge transport characteristics

    I. Osaka, T. Abe, H. Mori, M. Saito, N. Takemura, T. Koganezawa and K. Takimiya, J. Mater. Chem. C, 2014, 2, 2307
    DOI: 10.1039/C3TC32386B

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