Issue 8, 2014

Chemically amplified phenolic fullerene electron beam resist

Abstract

Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of ∼40 μC cm−2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as ∼20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm half-pitch at slightly higher dose.

Graphical abstract: Chemically amplified phenolic fullerene electron beam resist

Supplementary files

Article information

Article type
Paper
Submitted
25 Sep 2013
Accepted
15 Dec 2013
First published
18 Dec 2013
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2014,2, 1505-1512

Chemically amplified phenolic fullerene electron beam resist

D. X. Yang, A. Frommhold, X. Xue, R. E. Palmer and A. P. G. Robinson, J. Mater. Chem. C, 2014, 2, 1505 DOI: 10.1039/C3TC31896F

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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