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Issue 8, 2014
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Chemically amplified phenolic fullerene electron beam resist

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Abstract

Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of ∼40 μC cm−2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as ∼20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm half-pitch at slightly higher dose.

Graphical abstract: Chemically amplified phenolic fullerene electron beam resist

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Publication details

The article was received on 25 Sep 2013, accepted on 15 Dec 2013 and first published on 18 Dec 2013


Article type: Paper
DOI: 10.1039/C3TC31896F
Citation: J. Mater. Chem. C, 2014,2, 1505-1512
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    Chemically amplified phenolic fullerene electron beam resist

    D. X. Yang, A. Frommhold, X. Xue, R. E. Palmer and A. P. G. Robinson, J. Mater. Chem. C, 2014, 2, 1505
    DOI: 10.1039/C3TC31896F

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